Tunnel Field-Effect Transistor with Narrow Band-Gap Channel and Strong Gate Coupling

ABSTRACT

A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.

This application is a divisional of patent application Ser. No.11/828,211, entitled “Tunnel Field-Effect Transistor with NarrowBand-Gap Channel and Strong Gate Coupling,” filed on Jul. 25, 2007,which application is incorporated herein by reference.

TECHNICAL FIELD

This invention relates generally to semiconductor devices, and morespecifically to tunnel field-effect transistors formed of gated p-i-ndiodes.

BACKGROUND

The metal-oxide-semiconductor (MOS) is a dominating technology forintegrated circuits at 90 nm technology and beyond. A MOS device canwork in three regions, depending on gate voltage V_(g) and source-drainvoltage V_(ds), linear, saturation, and sub-threshold regions. Thesub-threshold region is a region where V_(g) is smaller than thethreshold voltage V_(t). The sub-threshold swing represents the easinessof switching the transistor current off and thus is an important factorin determining the speed of a MOS device. The sub-threshold swing can beexpressed as a function of m*kT/q, where m is a parameter related tocapacitance. The sub-threshold swing of a typical MOS device has a limitof about 60 mV/decade (kT/q) at room temperature, which in turn sets alimit for further scaling of operation voltage VDD and threshold voltageV_(t). This limitation is due to the drift-diffusion transport mechanismof carriers. For this reason, existing MOS devices typically cannotswitch faster than 60 mV/decade at room temperatures. The 60 mV/decadesub-threshold swing limit also applies to FinFET or ultra thin-bodyMOSFET on silicon-on-insulator (SOI) devices. However, even with bettergate control over the channel, an ultra thin body MOSFET on SOI orFinFET can only achieve close to, but not below, the limit of 60mV/decade. With such a limit, faster switching at low operation voltagesfor future nanometer devices cannot be achieved.

To solve the above-discussed problem, tunnel field-effect transistors(FET) have been explored. FIG. 1 illustrates a FET device formed of ap-i-n diode called the I-MOS (impact-ionization MOS). The I-MOS has aheavily doped p-type (source) region 10 and a heavily doped n-type(drain) region 12 separated by an intrinsic channel region 14. Gate 16is formed over the intrinsic channel region 14 to control the intrinsicchannel region 14. The I-MOS has an offset region 18 between sourceregion 10 and edge 11 of gate 16. When the intrinsic channel region 14is inverted by the gate bias applied to gate 16, the drain-sourcevoltage drops mainly across the offset region 18 and triggers anavalanche breakdown. The “avalanche multiplication” during breakdownserves as an internal positive feedback, so that the sub-threshold swingcan be at a value less than 10 mV/decade at a very low drain voltage(for example, 0.2V). Such an I-MOS offers a promising approach forfuture MOS technology at 45 nm node and below due to the low powerusage, high switching speed, and high on-current to off-current ratio.

The I-MOS shown in FIG. 1 suffers from some drawbacks, however. Theoutput characteristics have large drain-to-source voltage dependence.Further, although it is capable of ultra-fast switching by avalanchemechanism, the critical width of the offset region 18 is sensitive toalignment errors between the gate and the source/drain. This leads tolarge variations of electrical fields in the offset region 18 duringswitching, which in turn leads to large variations of the sub-thresholdswing. Furthermore, the avalanche mechanism of the I-MOS device istemperature sensitive, and temperature variations also lead tovariations in sub-threshold swing.

FIG. 2 illustrates an asymmetric tunnel FET device formed of gated p-i-ndiode, which includes a heavily doped drain region 102 and a heavilydoped source region 104 separated by channel region 103. Drain region102 comprises silicon, while source region 104 comprises silicongermanium. The channel region 103 is formed of intrinsic silicon. Gate108 controls channel region 103. The tunnel FET device shown in FIG. 2has a kT/q independent sub-threshold swing and a low off-state current.However, such a structure can only improve the on-currents of n-channeltunnel FET devices, while the on-currents of p-channel tunnel FETdevices are not improved.

What is needed in the art, therefore, is a tunnel FET structureproviding a high on current, a low off-current, and a reliableperformance for both p-channel and n-channel tunnel FET devices.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, a semiconductordevice includes a low energy band-gap layer comprising a semiconductormaterial; a gate dielectric on the low energy band-gap layer; a gateelectrode over the gate dielectric; a first source/drain region adjacentthe gate dielectric, wherein the first source/drain region is of a firstconductivity type; and a second source/drain region adjacent the gatedielectric. The second source/drain region is of a second conductivitytype opposite the first conductivity type. The low energy band-gap layeris located between the first and the second source/drain regions.

In accordance with another aspect of the present invention, asemiconductor device includes a semiconductor substrate; a low energyband-gap region over the semiconductor substrate; a gate dielectric onthe low energy band-gap region; a gate electrode over the gatedielectric; a pair of spacers on opposite sidewalls of the gateelectrode; and a first and a second source/drain region on opposingsides of the low energy band-gap region. The first and the secondsource/drain regions have a higher energy band-gap than the low energyband-gap region, and are of opposite conductivity types. Thesemiconductor device further includes a first self-aligned offset regionbetween and adjoining the low energy band-gap region and the firstsource/drain region, wherein the first self-aligned offset region is ofa same conductivity type as the first source/drain region; and a secondself-aligned offset region between and adjoining the low energy band-gapregion and the second source/drain region. The second self-alignedoffset region is of a same conductivity type as the second source/drainregion. The first and the second self-aligned offset regions include asame material as the low energy band-gap region.

In accordance with yet another aspect of the present invention, asemiconductor device includes a semiconductor substrate; a low energyband-gap region over the semiconductor substrate; a gate dielectric onthe low energy band-gap region; a gate electrode over the gatedielectric; a pair of spacers on opposing sidewalls of the gateelectrode; and a first and a second source/drain region on opposingsides of the low energy band-gap region. The first and the secondsource/drain regions have a higher band-gap than the low energy band-gapregion, and are of opposite conductivity types. The semiconductor devicefurther includes a first source/drain extension region between andadjoining the low energy band-gap region and the first source/drainregion, wherein the first source/drain extension region is of a sameconductivity type as the first source/drain region; and a secondsource/drain extension region between and adjoining the low energyband-gap region and the second source/drain region. The secondsource/drain extension region is of a same conductivity type as thesecond source/drain region. The first and the second source/drainextension regions are at least moderately doped.

In accordance with yet another aspect of the present invention, a methodfor forming a semiconductor device includes providing a low energyband-gap layer; forming a gate dielectric on the low energy band-gaplayer; forming a gate electrode over the gate dielectric; forming afirst source/drain region adjacent the gate dielectric, wherein thefirst source/drain region is of a first conductive type; and forming asecond source/drain region adjacent the gate dielectric and on anopposing side of the gate electrode than the first source/drain region,wherein the second source/drain region is of a second conductivity typeopposite the first conductivity type.

In accordance with yet another aspect of the present invention, a methodfor forming a semiconductor device includes providing a semiconductorsubstrate; forming a low energy band-gap layer over the semiconductorsubstrate; forming a dummy gate stack over the low energy band-gaplayer; implanting portions of the low energy band-gap layer unmasked bythe dummy gate stack, wherein portions of the low energy band-gap layeron opposite sides of the dummy gate stack are at least moderatelyimplanted with impurities having opposite conductivity types; forminggate spacers on sidewalls of the dummy gate stack after the step ofimplanting; using the dummy gate stack and the gate spacer as a mask,recessing the low energy band-gap layer to form recesses; filling therecesses with a semiconductor material having a higher band-gap than thelow energy band-gap layer to form a first and a second semiconductorregion; implanting the first and the second semiconductor regions withimpurities having opposite conductivity types; removing the dummy gatestack; forming a gate dielectric layer and a gate electrode layer in aspace left by the dummy gate stack; and performing a chemical mechanicalpolish, wherein remaining portions of the gate dielectric layer and thegate electrode layer form a gate dielectric and a gate electrode,respectively.

In accordance with yet another aspect of the present invention, a methodfor forming a semiconductor device includes providing a semiconductorsubstrate; forming a low energy band-gap layer over the semiconductorsubstrate; forming a dummy gate stack over the low energy band-gaplayer; forming gate spacers on sidewalls of the dummy gate stack; usingthe dummy gate stack and the gate spacers as a mask, recessing the lowenergy band-gap layer to form recesses; filling the recesses with asemiconductor material having a higher band-gap than the low energyband-gap layer to form a first and a second semiconductor region;performing a first and a second implantation substantially vertical toimplant the first and the second semiconductor regions with impuritieshaving the first and the second conductivity types, respectively; tiltperforming a third and a fourth implantation to form a first and asecond source/drain extension region adjoining the first and the secondsemiconductor regions, respectively, wherein the first and the secondsource/drain extension regions are at least moderately doped and havesame conductivity types as the first and the second semiconductorregions, respectively; removing the dummy gate stack; forming a gatedielectric layer and a gate electrode layer in a space left by the dummygate stack; and performing a chemical mechanical polish, whereinremaining portions of the gate dielectric layer and the gate electrodelayer form a gate dielectric and a gate electrode, respectively.

The advantageous features of the present invention include balancedperformance of p-channel and n-channel FET devices, reduced leakagecurrent, and improved sub-threshold swing and on-current.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates an I-MOS device formed of gated p-i-n diode includingan offset channel region;

FIG. 2 illustrates a tunnel field-effect transistor (FET), wherein thesource region is formed of silicon germanium, the drain region is formedof silicon, and the channel region includes intrinsic silicon;

FIGS. 3 through 10 are cross-sectional views of intermediate stages inthe manufacturing of a first embodiment of the present invention,wherein source and drain regions are formed by implantations;

FIG. 11A illustrates maximum electrical fields at tunneling junctions asa function of dielectric constants of gate dielectrics;

FIG. 11B illustrates an I-V curve of the first embodiment;

FIG. 11C illustrates a simulated energy band diagram of the firstembodiment;

FIG. 11D compares the drive currents of the first embodiment of thepresent invention with various MOS devices having different structuresand channel materials;

FIG. 12 illustrates expected I-V curves of asymmetric n-channel andp-channel tunnel FET devices;

FIG. 13 illustrates an inverter formed of asymmetric tunnel FETs;

FIGS. 14 through 19A are cross-sectional views of intermediate stages inthe manufacturing of a second embodiment of the present invention,wherein offset regions are formed between a channel region andrespective source/drain regions;

FIG. 19B illustrates a simulated energy band diagram of the secondembodiment;

FIGS. 20 through 26 are cross-sectional views of intermediate stages inthe manufacturing of a third embodiment of the present invention,wherein at least moderately doped source/drain extension regions areformed between the channel region and source/drain regions; and

FIG. 27 illustrates an embodiment of the present invention having agate-first structure, wherein a stressed contact etch stop layer isformed.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the presently preferred embodiments arediscussed in detail below. It should be appreciated, however, that thepresent invention provides many applicable inventive concepts that canbe embodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

Novel tunnel field-effect transistors (FET) formed of gated p-i-n diodesand the methods of forming the same are provided. The intermediatestages of manufacturing preferred embodiments of the present inventionare illustrated. The variations of the preferred embodiments are thendiscussed. Throughout the various views and illustrative embodiments ofthe present invention, like reference numbers are used to designate likeelements.

A first embodiment of the present invention is provided in FIGS. 3through 10. Referring to FIG. 3, substrate 20 is provided. In anembodiment, substrate 20 is a bulk substrate comprising a singlecrystalline semiconductor material, such as silicon, or a compoundsemiconductor material. In other embodiments, substrate 20 may includemore than one semiconductor layer. For example, substrate 20 may have asilicon-on-insulator or silicon-on-carbide structure, including siliconlayer 20 ₃ on insulator layer 20 ₂. Insulator layer 20 ₂ may further belocated on semiconductor layer 20 ₁. In yet other embodiments, substrate20 includes an insulator.

Low (energy) band-gap layer 22 is formed over substrate 20. Throughoutthe description, the term “low band-gap” refers to band-gaps lower thanthe band-gap of silicon (1.12 eV). In the preferred embodiment, lowband-gap layer 22 is formed of silicon germanium (SiGe). In otherembodiments, other semiconductor materials having low band-gaps, such asGe, GaAs, InGaAs, InAs, InSb, and combinations thereof, can be used. Dueto the possible mismatch in the lattice constants of low band-gap layer22 and the underlying substrate 20, low band-gap layer 22 may bestrained. Alternatively, low band-gap layer 22 forms a bulk substrate,with no underlying substrate 20.

In the embodiment wherein the top layer of substrate 20 includes acrystalline semiconductor material, an epitaxial growth may be performedto grow low band-gap layer 22 on substrate 20. Further, in the case lowband-gap layer comprises SiGe, the germanium atomic percentage ispreferably less than about 80 percent. It is realized, however, that theoptimum germanium percentage is related to the desirable tunnel FETcharacteristics. For example, if high switching speed is preferred, thegermanium percentage is preferably high. However, this may cause theleakage current of the resulting tunnel FET to increase. Conversely, iflow power consumption is more preferred over high switching speed, lowband-gap layer 22 preferably has a lower germanium percentage.

Low band-gap layer 22 is preferably intrinsic. In an embodiment, lowband-gap layer 22 is un-doped. Alternatively, low band-gap layer 22 islightly doped to a concentration of less than about 1E15/cm³.

FIG. 4 illustrates the formation of a dummy gate stack, which includesdummy gate dielectric 24, dummy gate electrode 26, and dummy gate mask28. The dummy gate stack may be formed simultaneously with the formationof gate stacks of other metal-oxide-semiconductor (MOS) devices on thesame chip. As is known in the art, the formation of the dummy gate stackincludes forming a gate dielectric layer, forming a gate electrode layeron the gate dielectric layer, forming a gate mask layer on the gateelectrode, and patterning the stacked layers.

Photo resist 30 is then applied and patterned, followed by animplantation to dope an n-type impurity, which may include phosphorous,arsenic, and combinations thereof. The implantation may be verticallyperformed, or tilted toward the dummy gate stack. As a result, drainregion 32 is formed. Drain region 32 may be substantially aligned to theedge of the dummy gate stack, or extend under the dummy gate stack ifthe implantation is tilted. Photo resist 30 is then removed.

Referring to FIG. 5, photo resist 34 is applied and patterned, coveringdrain region 32 and a portion of the dummy gate stack. An implantationis then performed to dope a p-type impurity, such as boron, indium, andcombinations thereof. Again, the implantation may be verticallyperformed, or tilted toward the dummy gate stack. As a result, sourceregion 36 is formed. Similarly, source region 36 may be substantiallyaligned to the edge of the dummy gate stack, or extend under the dummygate stack if the implantation is tilted. Intrinsic channel region 38will be formed in an un-implanted region between drain region 32 andsource region 36.

In an embodiment, both drain region 32 and source region 36 are heavilydoped, and thus drain region 32 is referred to as an n+ region, whilesource region 36 is referred to as a p+ region. In the describedembodiments, “heavily doped” means an impurity concentration of aboveabout 10²⁰/cm³. One skilled in the art will recognize, however, thatheavily doped is a term of art that depends upon the specific devicetype, technology generation, minimum feature size, and the like. It isintended, therefore, that the term be interpreted in light of thetechnology being evaluated and not be limited to the describedembodiments. The resulting tunnel FET device will be an ambipolar FETdevice, which means that the tunnel FET device can be either ann-channel device or a p-channel device, depending on whether the gatevoltage is positive or negative, respectively.

In alternative embodiments, one of the drain region 32 and source region36 is heavily doped, while the other is moderately doped (referred to asan n region or a p region, depending on the impurity type). The term“moderately doped” may indicate an impurity concentration of lower than“heavily doped,” for example, between about 10¹⁸/cm³ and about 10²⁰/cm³.If drain region 32 is an n region, and source region 36 is a p+ region,the resulting tunnel FET will be an n-channel FET, and will be turned onby a positive gate voltage. Conversely, if drain region 32 is an n+region, and source region 36 is a p region, the resulting tunnel FETwill be a p-channel FET, and will be turned on by a negative gatevoltage.

FIG. 6 illustrates the formation of gate spacers 40 and source/drainsilicide regions 42. As is known in the art, the formation of gatespacers 40 may include forming a gate dielectric layer, and etching thegate dielectric layer to remove horizontal portions. Source/drainsilicide regions 42 may be formed by blanket forming a metal layer, andperforming an annealing to cause a reaction between the metal layer andthe underlying silicon. The un-reacted metal is then removed.

Referring to FIG. 7, a first inter-layer dielectric (ILD) 44 is formed,followed by a chemical mechanical polish (CMP) to level the top surfaceof ILD 44 to the top surface of dummy gate mask 28. ILD 44 may includecommonly used ILD materials, such as boronphosphosilicate glass (BPSG).Other elements such as carbon, nitrogen, oxygen, and combinationsthereof, may also be included.

In FIG. 8, photo resist 46 is applied and patterned, forming opening 48,through which dummy gate mask 28 is exposed. Next, as is shown in FIG.9, the dummy gate stack is removed, preferably by etching, exposing theintrinsic channel region 38.

Referring to FIG. 10, gate dielectric 50 and gate electrode 52 areformed. The formation process may include forming a gate dielectriclayer, forming a gate electrode layer, and performing a CMP to removeexcess materials. In the preferred embodiment, gate dielectric 50includes a high-k dielectric with a preferred k value between about 7and about 60. The preferred materials of gate dielectric 50 may includehigh-k metal oxides such as HfO₂, silicon nitride, silicon oxide,silicon oxynitride, and combinations thereof. Gate dielectric 50 mayalso have a composite structure including more than one layer. Gateelectrode 52 may include doped polysilicon, metals, metal silicides,multi-layers thereof, and combinations thereof.

The process steps discussed in the preceding paragraphs illustrate theformation of tunnel FET device 54. An advantageous feature of using thehigh-k gate dielectric materials is the increase in the drive current oftunnel FET device 54. FIG. 11A illustrates a simulation result, whichreveals the relationship between the maximum electrical field E_(max) inthe tunneling junction and the k value of gate dielectric 50. Lines 56,58, and 60 are the results of gate-to-source voltage being 1V, 1.5V, and2V, respectively. It is noted that when the k value increases, themaximum electrical field E_(max) increases accordingly. However, whenthe k value reaches around 60, the maximum electrical field E_(max)starts to saturate, and may even decrease if the k value furtherincreases. It is expected that with a constant physical thickness of thehigh-k gate dielectric 52, the current gain is substantiallyexponential. However, the capacitance only increases linearly.Therefore, the gain in the drive current of the tunnel FET device morethan offsets the degradation in the capacitance (and hence RC delay).Accordingly, the high-k dielectric materials are preferred.

Simulation results also revealed that the drive currents of tunnel FETsare related to the germanium percentage in the intrinsic channel region38. When the germanium percentage increases, the drive current increasesaccordingly.

FIG. 11B illustrates a simulated I-V characteristic of the embodimentshown in FIG. 10. It is found that the saturation drive currents ID areindependent from the drain voltages VD, and is only affected by the gatevoltages Vg.

FIG. 11C illustrates a simulated energy band diagram of a symmetricalchannel FET device as shown in FIG. 10, wherein the intrinsic channel isformed of SiGe. Lines 51 ₁ and 51 ₂ are a conduction band and a valenceband, respectively, with no gate voltage applied, while lines 51 ₃ and51 ₄ are a conduction band and a valence band, respectively with 1 voltgate-to-source voltage applied. It is noted that strong inversion occursafter the gate voltage is applied. The strong inversion causes thenarrowing between bands 51 ₃ and 51 ₄, and hence electrons can easilytunnel through the energy barrier between valence band 51 ₄ andconduction band 51 ₃ (refer to arrow 51 ₅), which barrier is narroweddue to the strong inversion.

FIG. 11D illustrates the drive currents of various devices as a functionof gate voltages. Dash line 53 ₁ is the simulation result of a SiGeintrinsic tunnel FET device (with 40 percent germanium) having a metalgate and a high-k gate dielectric (k=20). The remaining lines 53 ₂through 53 ₆ are results taken from various publications and simulationresults. Lines 53 ₂, 53 ₃, and 53 ₄ and are results of tunnel FETdevices with silicon channels, while lines 53 ₅ and 53 ₆ are results ofconventional MOS devices. FIG. 11D has shown that at a gate voltage of 1volt, the embodiment of the present invention (line 53 ₁), has a higherdrive current than others.

FIG. 12 illustrates expected I-V curves of asymmetric p-channel andn-channel tunnel FET devices. Preferably, for n-channel tunnel FETdevices, there are no drive currents when negative gate voltages areapplied, and drive currents are generated when positive gate voltagesare applied. The drive currents increase with the increase in the gatevoltages. On the other hand, for p-channel tunnel FET devices, there areno drive currents when positive gate voltages are applied. With negativegate voltages, drive currents are generated, wherein the drive currentsincrease with the increase in the magnitude of the negative gatevoltage. The reverse breakdown voltages of both p-channel and n-channeldevices preferably have magnitudes substantially equal to, or evengreater than, VDD. By adjusting the work function and the dopingconcentrations in source and drain regions, the starting points 55 fromwhich the drive currents begin to flow may be adjusted.

Table 1 shows the simulated electrical performance of various tunnelFETs having different channel materials and different gate dielectrics.

TABLE 1 When Vdd = 1V Substrate Tunnel FET MOS (i-Channel) Si Si SiGe SiGox SiO ² K = 10 K = 20 SiO ² EOT (Å) 20 7.8 3.9 20 Ion (A/μm) ~1e-6 ~1e-4  ~3e-3  ~1e-3 Ioff (A/μm) <1e-14 ~1e-10 ~1e-10 ~1e-9 S (mV/dec <60<60 <60 >60 300K) DIBL (mV/V) <20 <20 <20 >150

Table 1 has proven that the performances of tunnel FET devices havingintrinsic SiGe channels are overall at least comparable, and likely tobe better than conventional MOS devices. Tunnel FET devices withintrinsic SiGe channels have greater drive currents than tunnel FETdevices with intrinsic Si channels, although leakage currents of tunnelFET devices with intrinsic SiGe channels are likely to be greater thanthat of the tunnel FET devices with intrinsic Si channels.

It is appreciated that the work function of gate electrode 52 alsoaffects the device performance, such as the I-V curve of tunnel FETdevice 54. To achieve the optimum I-V curve, the doping concentrationsof drain region 32, source region 36, intrinsic channel region 38, andthe work function of gate electrode 52, need to be tuned.

As discussed in the preceding paragraphs, an n-channel tunnel FET deviceand a p-channel tunnel FET device can be formed by heavily doping eitherone of the drain region 32 or source region 36, respectively, andmoderately doping the other source/drain region. FIG. 13 illustrates aninverter formed using the asymmetrically doped tunnel FETs. The inverterincludes p-channel tunnel FET device 62 and n-channel tunnel FET device64. The bracket signs indicate the heavily doped sides of the respectivetunnel FET devices. The inverter shown in FIG. 13 works essentially thesame as the inverters formed of conventional MOS devices. When a highinput voltage Vin is applied, the p-channel tunnel FET device 62 isturned off, while the n-channel tunnel FET device 64 is turned on.Conversely, when a low input voltage Vin is applied, the p-channeltunnel FET device 62 is turned on, while the n-channel tunnel FET device64 is turned off. The relationships between input voltage Vin and thestates of n-channel tunnel and p-channel tunnel FET devices areillustrated in Table 2.

TABLE 2 Vin Vout N-Channel FET P-Channel FET High Low on off Low Highoff on

FIGS. 14 through 19 illustrate cross-sectional views in themanufacturing of a second embodiment. The initial steps of thisembodiment may be essentially the same as shown in FIGS. 3 through 5,and hence forming drain region 32, source region 36, and channel region38. Next, as shown in FIG. 14, gate spacers 40 are formed usingessentially the same method as discussed in the first embodiment. InFIG. 15, the exposed SiGe regions 32 and 36 are recessed, formingrecesses 68, while the portions of SiGe regions 32 and 36 protected bygate spacers 40 are left, forming self-aligned offset regions 33 and 37,respectively. The recessing step may be performed by anisotropically orisotropically etching the exposed SiGe regions 32 and 36 using plasma.Alternatively, the recessing step may include implanting amorphizingspecies, such as silicon, germanium, argon, and the like, into theexposed portions of the low energy band-gap layer to form amorphizedregions, and selectively etching the amorphized regions. SiGe regions 32and 36 may be recessed until the underlying substrate 20 is exposed.Alternatively, only a top portion of the SiGe regions 32 and 36 arerecessed.

In FIG. 16, silicon is epitaxially grown in recesses 68, forming siliconregions 70. Preferably, selective epitaxial growth (SEG) is performedusing a chemical vapor deposition tool, wherein the precursors includesilicon-containing gases such as SiH₄ (silane).

FIG. 17 illustrates the implantation of silicon regions 70. The siliconregion 70 adjoining offset region 33 is heavily doped with an n-typeimpurity, forming n+ region 72, while the silicon region 70 adjoiningoffset region 37 is heavily doped with a p-type impurity, forming p+region 74. As one skilled in the art will perceive, the formation of then+ region 72 and the p+ region 74 involves the formation of photoresists as masks.

FIG. 18 illustrates the formation of source/drain silicide regions 42and ILD 44, which may be formed using essentially the same methods andmaterials as in the first embodiment. Next, dummy gate mask 28, dummygate electrode 26, and dummy gate dielectric 24 are removed, and gatedielectric 50 and gate electrode 52 are formed. The resulting structureis shown in FIG. 19A. Again, the materials and the formation methods ofgate dielectric 50 and gate electrode 52 may be essentially the same asin the first embodiment.

FIG. 19B illustrates a simulated energy band diagram of tunnel FETdevices similar to what is shown in FIG. 19A, except the simulatedtunnel FET devices have gate-first structures. It is noted that thevalence band 69 has heterogeneous structures 71. It is believed thatsuch heterogeneous structures act as barriers for the leakage currents.As a result, the leakage currents of the structure shown in FIG. 19A aresignificantly reduced.

Similarly, instead of doping both the source side and drain side (eachincluding an offset region 33 or 37 and an adjoining doped region 72 or74) heavily, either one of the source/drain sides may be heavily doped,while the other side may be moderately doped, forming asymmetric tunnelFETs.

An advantageous feature of this embodiment is that by replacing portionsof the source/drain regions with silicon, the self-aligned offset SiGeregions adjoin silicon regions, hence forming a hetero-structure, andthe off-state leakage current is reduced. Simulation results haverevealed that by using this structure, the leakage current can bereduced by up to two orders. A possible reason may be that the buttedsilicon regions result in a higher band barrier to retard the leakagecurrents.

FIGS. 20 through 26 illustrate a third embodiment of the presentinvention. Referring to FIG. 20, low band-gap layer 22 is formed onsubstrate 20. A dummy gate stack, including dummy gate dielectric 24,dummy gate electrode 26, and dummy mask 28, is then formed. Next, gatespacers 40 are formed, as is shown in FIG. 21. FIG. 22 illustrates therecessing of low band-gap layer 22, wherein the recessing is preferablyisotropic, so that the resulting recesses 76 may extend under gatespacers 40. Alternatively, the recessing is anisotropic. Recesses 76 arethen filled with epitaxially grown silicon, forming silicon regions 78,as is shown in FIG. 23.

Referring to FIG. 24, n+ drain region 80 and p+ region source 82 areformed. To form n+drain region 80, a first photo resist (not shown) isformed and patterned, covering a half of the illustrated structure, andan implantation is performed to introduce an n-type impurity, forming n+drain region 80. The first photo resist is then removed, and a secondphoto resist is formed to cover the other half of the illustratedstructure. An implantation is then performed to introduce a p-typeimpurity, forming p+ source region 82. The second photo resist is thenremoved. Preferably, the implantations are substantially vertical.

FIG. 26 illustrates the formation of n+ drain extension region 84 and p+source extension region 86. To form n+ drain extension region 84, aphoto resist is formed and patterned. A tilt implantation, which tiltstoward the dummy gate stack, is then performed. The implantation energyis preferably less than the energy used for implanting n+ drain region80. The photo resist is then removed. Similarly, p+ source extensionregion 86 is also formed using essentially the same tilt implantationprocess as n+ drain region 80.

Referring to FIG. 26, ILD 44, gate dielectric 50, and gate electrode 52,which are preferably essentially the same as in the first embodiment,are formed.

In the embodiments discussed in the preceding paragraphs, the left sidesof the structures are referred to as the drain sides and the right sidesare referred to as source sides. One skilled in the art will realizethat the source and drain sides are interchangeable, providingappropriate voltages are applied. In addition, although the first, thesecond, and the third embodiments use gate-last approaches, wherein therespective gate dielectrics and gate electrodes are formed after theformation of source/drain regions by replacing dummy gate stacks, oneskilled in the art will realize that gate-first approach may also beused. FIG. 27 illustrates an exemplary tunnel FET device with agate-first structure. Contacts 86 are electrically connected to drainregion 32 and source region 36. Contact etch stop layer 88 is formedover drain region 32, source region 36, and gate 90. Preferably, forp-channel tunnel FET devices, the respective CESLs provide compressivestresses, while for re-channel tunnel FET devices, the respective CESLsprovide tensile stresses.

Simulations have been performed to compare the results of theembodiments of the present invention to conventional MOSFET devices andasymmetric tunnel FET devices, wherein the conventional tunnel FETdevices have an asymmetric structure as shown in FIG. 2. The results areshown in Table 3:

TABLE 3 Conventional Conventional Embodiment Embodiments MOSFET TunnelFET 1 2 and 3 NFET PFET NFET PFET NFET PFET NFET PFET Ion 1 0.5  1  0.01 1  1  1  1 Ioff 1 1 10⁻⁶ 10⁻⁶ 10⁻⁴ 10⁻⁴ 10⁻⁶ 10⁻⁶Wherein the second row indicates the type of the FET devices, the thirdrow shows drive currents of the FET devices, and the fourth row showsthe leakage currents. The current values are relative currents (orcurrent ratios) relative to the respective currents of the conventionaln-type MOSFETs. The results have shown that the drive currents of theembodiments of the present invention are comparable to conventional MOSdevices. However, the leakage currents of the embodiments of the presentinvention are significantly lower. Compared to the conventional tunnelFET devices, the first embodiment of the present invention has higherp-channel drive currents, although the leakage currents are higher. Then-channel characteristics of the second and the third embodiments of thepresent invention are comparable to the conventional tunnel FET devices.However, the p-channel characteristics of the second and the thirdembodiments are significantly better than the conventional p-channeltunnel FET devices.

The embodiments of the present invention have several advantageousfeatures. First, the tunnel FET devices break the conventional MOSFETsub-threshold swing limit, and thus can achieve very high on/off currentratios. Second, the embodiments of the present invention may be appliedto both p-channel and n-channel tunnel FET devices without sacrificingeither on-currents or off-currents. Third, the current-voltagecharacteristics have weak temperature dependence and can be used forhigh-temperature applications. Lastly, the embodiments of the presentinvention have excellent resistance to short-channel effects and can beused for analog and digital applications with one channel length.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

1. A semiconductor device comprising: a semiconductor substrate; a lowenergy band-gap region over the semiconductor substrate; a gatedielectric over the low energy band-gap region; a gate electrode overthe gate dielectric; a first and a second source/drain region onopposing sides of the low energy band-gap region, wherein the first andthe second source/drain regions have a higher band-gap than the lowenergy band-gap region, and wherein the first and the secondsource/drain regions are of opposite conductivity types; a firstsource/drain extension region between and adjoining the low energyband-gap region and the first source/drain region, wherein the firstsource/drain extension region is of a same conductivity type as thefirst source/drain region; and a second source/drain extension regionbetween and adjoining the low energy band-gap region and the secondsource/drain region, wherein the second source/drain extension region isof a same conductivity type as the second source/drain region.
 2. Thesemiconductor device of claim 1, wherein the first and the secondsource/drain regions and the first and the second source/drain extensionregions are heavily doped.
 3. The semiconductor device of claim 1,wherein the low energy band-gap region and the first and the secondsource/drain extension regions comprise silicon germanium, and whereinthe first and the second source/drain regions comprise silicon withoutgermanium doped therein.
 4. The semiconductor device of claim 1, whereineach of the first and the second source/drain extension regions extendsdirectly under a gate spacer.
 5. The semiconductor device of claim 1,wherein each of the first and the second source/drain extension regionscomprises at least a portion having a band-gap lower than a band-gap ofthe first and the second source/drain regions.
 6. The semiconductordevice of claim 1, wherein the low energy band-gap region comprises amaterial selected from the group consisting essentially of SiGe, Ge,GaAs, InGaAs, InAs, InSb, and combinations thereof.
 7. The semiconductordevice of claim 1, wherein the gate dielectric has a dielectric constantbetween about 7 and about
 60. 8. The semiconductor device of claim 1,wherein the semiconductor substrate comprises a material selected fromthe group consisting essentially of SiO₂, SiC, doped Si, un-doped Si,and combinations thereof.
 9. A semiconductor device comprising: asemiconductor substrate; a low energy band-gap region over thesemiconductor substrate; a gate dielectric over the low energy band-gapregion; a gate electrode over the gate dielectric; a first and a secondsemiconductor region on opposing sides of, and contacting, the lowenergy band-gap region, wherein the first and the second semiconductorregions have a higher band-gap than the low energy band-gap region, andwherein the first and the second semiconductor regions are of oppositeconductivity types; a first source/drain extension region with at leasta portion formed in the low energy band-gap region, wherein the firstsource/drain extension region is of a same conductivity type as thefirst semiconductor region; and a second source/drain extension regionwith at least a portion formed in the low energy band-gap region,wherein the second source/drain extension region is of a sameconductivity type as the second semiconductor region.
 10. Thesemiconductor device of claim 9, wherein impurity concentrations of thefirst and the second source/drain extension regions are higher thanabout 10²⁰/cm³.
 11. The semiconductor device of claim 9, wherein abottom surface of the low energy band-gap region is substantially levelwith bottom surfaces of the first and the second semiconductor regions.12. The semiconductor device of claim 9, wherein the low energy band-gapregion comprises silicon germanium, and wherein the first and the secondsource/drain regions comprise silicon without germanium doped therein.13. The semiconductor device of claim 9, wherein each of the first andthe second source/drain extension regions extends directly under a gatespacer.
 14. The semiconductor device of claim 9, wherein depths of thefirst and the second source/drain extension regions are smaller thandepths of the first and the second semiconductor regions.
 15. Thesemiconductor device of claim 9, wherein the low energy band-gap regioncomprises a material selected from the group consisting essentially ofSiGe, Ge, GaAs, InGaAs, InAs, InSb, and combinations thereof.
 16. Asemiconductor device comprising: a metal-oxide-semiconductor (MOS)device comprising: a channel region having a first band-gap; a first anda second source/drain region on opposing sides of the channel region,wherein the first and the second source/drain regions have a secondband-gap greater than the first band-gap, and wherein the first and thesecond source/drain regions are of opposite conductivity types; a firstsource/drain extension region of a same conductivity type as the firstsource/drain region, wherein the first source/drain extension region hasan impurity concentration higher than about 10²⁰/cm³; and a secondsource/drain extension region of a same conductivity type as the secondsource/drain region, wherein the second source/drain extension regionhas an impurity concentration higher than about 10²⁰/cm³, and whereinthe first and second source/drain extension regions contact the channelregion, and are between the first and the second source/drain regions.17. The semiconductor device of claim 16 further comprising a gateelectrode directly over the channel region, and gate spacers onsidewalls of the gate electrode, wherein the first and the secondsource/drain extension regions extends directly under the gate spacers.18. The semiconductor device of claim 16, wherein the channel regioncomprises silicon germanium, and wherein at least portions of the firstand the second source/drain regions comprises silicon, with no germaniumtherein.
 19. The semiconductor device of claim 16, wherein the firstsource/drain region and the first source/drain extension region are adrain region and a drain extension region, respectively, and are ofn-type, and wherein the second source/drain region and the secondsource/drain extension region are a source region and a source extensionregion, respectively, and are of p-type.
 20. The semiconductor device ofclaim 16, wherein depths of the first and the second source/drainextension regions are less than depths of the first and the secondsource/drain regions.